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Quantum Mechanical Effects on Random Oxide Thickness and Doping Fluctuations in Ultrasmall Semiconductor Devices

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Andrei, P., & Mayergoyz, I. D. (2003). Quantum Mechanical Effects on Random Oxide Thickness and Doping Fluctuations in Ultrasmall Semiconductor Devices. Journal Of Applied Physics. Retrieved from http://dx.doi.org/10.1063/1.1625084
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Choose the citation style.
Andrei, P., & Mayergoyz, I. D. (2003). Quantum Mechanical Effects on Random Oxide Thickness and Doping Fluctuations in Ultrasmall Semiconductor Devices. Journal Of Applied Physics. Retrieved from http://dx.doi.org/10.1063/1.1625084

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