Current Search: National High Magnetic Field Laboratory (x) » Datta, Timir (x) » Jaroszynski, Jan (x)
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Title
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Scatterings And Quantum Effects In (al, In)n/gan Heterostructures For High-power And High-frequency Electronics.
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Creator
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Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, Datta, Timir
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Abstract/Description
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Charge transport in the wide-band-gap (Al, In)N/GaN heterostructures with high carrier density approximately 2 x 10(13) cm(-2) is investigated over a large range of temperature (270 mK
Show moreCharge transport in the wide-band-gap (Al, In)N/GaN heterostructures with high carrier density approximately 2 x 10(13) cm(-2) is investigated over a large range of temperature (270 mK <= T <= 280 K) and magnetic field (0 <= B <= 18 T). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23m(e) is determined. Furthermore, the linear dependence with temperature (T < 20 K) of the inelastic scattering rate (tau(-1)(i) proportional to T) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (tau(q)/tau(t) < 1) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.
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Date Issued
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2018-02-07
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Identifier
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FSU_libsubv1_wos_000424387600003, 10.1103/PhysRevApplied.9.024006
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Format
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Citation
