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High-field transport properties of a P-doped BaFeAs film on technical substrate.

Title: High-field transport properties of a P-doped BaFeAs film on technical substrate.
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Name(s): Iida, Kazumasa, author
Sato, Hikaru, author
Tarantini, Chiara, author
Hänisch, Jens, author
Jaroszynski, Jan, author
Hiramatsu, Hidenori, author
Holzapfel, Bernhard, author
Hosono, Hideo, author
Type of Resource: text
Genre: Journal Article
Text
Date Issued: 2017-01-12
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: High temperature (high-T) superconductors like cuprates have superior critical current properties in magnetic fields over other superconductors. However, superconducting wires for high-field-magnet applications are still dominated by low-T NbSn due probably to cost and processing issues. The recent discovery of a second class of high-T materials, Fe-based superconductors, may provide another option for high-field-magnet wires. In particular, AEFeAs (AE: Alkali earth elements, AE-122) is one of the best candidates for high-field-magnet applications because of its high upper critical field, H, moderate H anisotropy, and intermediate T. Here we report on in-field transport properties of P-doped BaFeAs (Ba-122) thin films grown on technical substrates by pulsed laser deposition. The P-doped Ba-122 coated conductor exceeds a transport J of 10 A/cm at 15 T for main crystallographic directions of the applied field, which is favourable for practical applications. Our P-doped Ba-122 coated conductors show a superior in-field J over MgB and NbTi, and a comparable level to NbSn above 20 T. By analysing the E - J curves for determining J, a non-Ohmic linear differential signature is observed at low field due to flux flow along the grain boundaries. However, grain boundaries work as flux pinning centres as demonstrated by the pinning force analysis.
Identifier: FSU_pmch_28079117 (IID), 10.1038/srep39951 (DOI), PMC5227693 (PMCID), 28079117 (RID), 28079117 (EID), srep39951 (PII)
Publication Note: This NIH-funded author manuscript originally appeared in PubMed Central at https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5227693.
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_pmch_28079117
Owner Institution: FSU
Is Part Of: Scientific reports.
2045-2322
Issue: vol. 7

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Iida, K., Sato, H., Tarantini, C., Hänisch, J., Jaroszynski, J., Hiramatsu, H., … Hosono, H. (2017). High-field transport properties of a P-doped BaFeAs film on technical substrate. Scientific Reports. Retrieved from http://purl.flvc.org/fsu/fd/FSU_pmch_28079117