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Micro-architecture Embedding Ultra-thin Interlayer To Bond Diamond And Silicon Via Direct Fusion

Title: Micro-architecture Embedding Ultra-thin Interlayer To Bond Diamond And Silicon Via Direct Fusion.
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Name(s): Kim, Jong Cheol, author
Kim, Jongsik, author
Xin, Yan, author
Lee, Jinhyung, author
Kim, Young-Gyun, author
Subhash, Ghatu, author
Singh, Rajiv K., author
Arjunan, Arul C., author
Lee, Haigun, author
Type of Resource: text
Genre: Journal Article
Text
Journal Article
Date Issued: 2018-05-21
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (similar to 3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry. Published by AIP Publishing.
Identifier: FSU_libsubv1_wos_000433140900009 (IID), 10.1063/1.5030580 (DOI)
Keywords: impact, carbon, devices, gan, technology, gallium, on-diamond, sps, wafers
Publication Note: The publisher’s version of record is available at https://doi.org/10.1063/1.5030580
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000433140900009
Host Institution: FSU
Is Part Of: Applied Physics Letters.
0003-6951
Issue: iss. 21, vol. 112

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Kim, J. C., Kim, J., Xin, Y., Lee, J., Kim, Y. -G., Subhash, G., … Lee, H. (2018). Micro-architecture Embedding Ultra-thin Interlayer To Bond Diamond And Silicon Via Direct Fusion. Applied Physics Letters. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000433140900009