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High-field Magnetoresistance Of Organic Semiconductors

Title: High-field Magnetoresistance Of Organic Semiconductors.
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Name(s): Joshi, G., author
Teferi, M. Y., author
Miller, R., author
Jamali, S., author
Groesbeck, M., author
van Tol, J., author
McLaughlin, R., author
Vardeny, Z. V., author
Lupton, J. M., author
Malissa, H., author
Boehme, C., author
Type of Resource: text
Genre: Journal Article
Text
Journal Article
Date Issued: 2018-08-09
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Lande g factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multifrequency continuous-wave electrically detected magnetic-resonance experiments. The measurements are performed on identical devices under similar conditions in order to independently assess the magnetic-field-dependent spin-mixing mechanism, the so-called Delta g mechanism. An understanding of the microscopic origin of magnetoresistance in organic semiconductors is crucial for developing reliable magnetometer devices capable of operating over a broad range of magnetic fields of order 10(-7)-10 T.
Identifier: FSU_libsubv1_wos_000441238900001 (IID), 10.1103/PhysRevApplied.10.024008 (DOI)
Keywords: magnetic-field, devices, conjugated polymer
Publication Note: The publisher’s version of record is available at https://doi.org/10.1103/PhysRevApplied.10.024008
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000441238900001
Host Institution: FSU
Is Part Of: Physical Review Applied.
2331-7019
Issue: iss. 2, vol. 10

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Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., Van Tol, J., … Boehme, C. (2018). High-field Magnetoresistance Of Organic Semiconductors. Physical Review Applied. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000441238900001