You are here

Phase Modulators Based On High Mobility Ambipolar Rese2 Field-effect Transistors

Title: Phase Modulators Based On High Mobility Ambipolar Rese2 Field-effect Transistors.
6 views
0 downloads
Name(s): Pradhan, Nihar R., author
Garcia, Carlos, author
Isenberg, Bridget, author
Rhodes, Daniel, author
Feng, Simin, author
Memaran, Shahriar, author
Xin, Yan, author
McCreary, Amber, author
Walker, Angela R. Hight, author
Raeliarijaona, Aldo, author
Terrones, Humberto, author
Terrones, Mauricio, author
McGill, Stephen, author
Balicas, Luis, author
Type of Resource: text
Genre: Journal Article
Text
Journal Article
Date Issued: 2018-08-24
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (similar to 2 to 3 layers), we extract field-effect carrier mobilities in excess of 10(2) cm(2)/Vs at room temperature in crystals with nearly similar to 10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90 degrees or nearly 180 degrees. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
Identifier: FSU_libsubv1_wos_000442606500032 (IID), 10.1038/s41598-018-30969-7 (DOI)
Keywords: performance, chemical-vapor-deposition, metal, anisotropic res2, atomically thin, dichalcogenides, few-layer res2, multilayer mos2, p-n heterojunctions, rhenium
Publication Note: The publisher’s version of record is available at https://doi.org/10.1038/s41598-018-30969-7
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000442606500032
Owner Institution: FSU
Is Part Of: Scientific Reports.
2045-2322
Issue: vol. 8

Choose the citation style.
Pradhan, N. R., Garcia, C., Isenberg, B., Rhodes, D., Feng, S., Memaran, S., … Balicas, L. (2018). Phase Modulators Based On High Mobility Ambipolar Rese2 Field-effect Transistors. Scientific Reports. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000442606500032