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Anomalously Large Resistance At The Charge Neutrality Point In A Zero-gap Inas/gasb Bilayer

Title: Anomalously Large Resistance At The Charge Neutrality Point In A Zero-gap Inas/gasb Bilayer.
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Name(s): Yu, W., author
Clerico, V., author
Hernandez Fuentevilla, C., author
Shi, X., author
Jiang, Y., author
Saha, D., author
Lou, W. K., author
Chang, K., author
Huang, D. H., author
Gumbs, G., author
Smirnov, D., author
Stanton, C. J., author
Jiang, Z., author
Bellani, V., author
Meziani, Y., author
Diez, E., author
Pan, W., author
Hawkins, S. D., author
Klem, J. F., author
Type of Resource: text
Genre: Journal Article
Text
Journal Article
Date Issued: 2018-05-31
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.
Identifier: FSU_libsubv1_wos_000433958500005 (IID), 10.1088/1367-2630/aac595 (DOI)
Keywords: system, phase, state, semiconductor, topological insulators, condensate, excitonic insulator, excitonic insulator transition, magnetotransport, quantum transport, quantum-well
Publication Note: The publisher’s version of record is available at https://doi.org/10.1088/1367-2630/aac595
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000433958500005
Host Institution: FSU
Is Part Of: New Journal of Physics.
1367-2630
Issue: vol. 20

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Yu, W., Clerico, V., Hernandez Fuentevilla, C., Shi, X., Jiang, Y., Saha, D., … Klem, J. F. (2018). Anomalously Large Resistance At The Charge Neutrality Point In A Zero-gap Inas/gasb Bilayer. New Journal Of Physics. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000433958500005