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Scatterings And Quantum Effects In (al, In)n/gan Heterostructures For High-power And High-frequency Electronics

Title: Scatterings And Quantum Effects In (al, In)n/gan Heterostructures For High-power And High-frequency Electronics.
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Name(s): Wang, Leizhi, author
Yin, Ming, author
Khan, Asif, author
Muhtadi, Sakib, author
Asif, Fatima, author
Choi, Eun Sang, author
Datta, Timir, author
Type of Resource: text
Genre: Journal Article
Text
Journal Article
Date Issued: 2018-02-07
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: Charge transport in the wide-band-gap (Al, In)N/GaN heterostructures with high carrier density approximately 2 x 10(13) cm(-2) is investigated over a large range of temperature (270 mK <= T <= 280 K) and magnetic field (0 <= B <= 18 T). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23m(e) is determined. Furthermore, the linear dependence with temperature (T < 20 K) of the inelastic scattering rate (tau(-1)(i) proportional to T) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (tau(q)/tau(t) < 1) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.
Identifier: FSU_libsubv1_wos_000424387600003 (IID), 10.1103/PhysRevApplied.9.024006 (DOI)
Keywords: mobility, gas, magnetoresistance, layers, times, low-density, weak-localization
Publication Note: The publisher's version of record is available at https://doi.org/10.1103/PhysRevApplied.9.024006
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000424387600003
Host Institution: FSU
Is Part Of: Physical Review Applied.
2331-7019
Issue: iss. 2, vol. 9

Choose the citation style.
Wang, L., Yin, M., Khan, A., Muhtadi, S., Asif, F., Choi, E. S., & Datta, T. (2018). Scatterings And Quantum Effects In (al, In)n/gan Heterostructures For High-power And High-frequency Electronics. Physical Review Applied. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000424387600003