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Ion etching of growing InP nanocrystals using microwave

Title: Ion etching of growing InP nanocrystals using microwave.
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Name(s): Strouse, Geoffrey F., inventor
Lovingood, Derek D., inventor
Type of Resource: text
Genre: Utility
Text
Date Created: 2008-08-29
Date Issued: 2013-01-22
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
Identifier: FSU_uspto_8357308 (IID), 8357308 (patent number), 2306483 (inventor key), 12/201589 (app id), 6c9256d97d167832cbab694dc904bd27 (assignee id)
Cited by US patents: 1
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_uspto_8357308
Use and Reproduction: Copyright not evaluated
Owner Institution: FSU

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Ion etching of growing InP nanocrystals using microwave. (2013). Ion etching of growing InP nanocrystals using microwave. Retrieved from http://purl.flvc.org/fsu/fd/FSU_uspto_8357308