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Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime

Title: Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime.
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Name(s): Wang, Junjie, author
Rhodes, Daniel, author
Feng, Simin, author
Nguyen, Minh An T., author
Watanabe, K., author
Taniguchi, T., author
Mallouk, Thomas E., author
Terrones, Mauricio, author
Balicas, Luis, author
Zhu, J., author
Type of Resource: text
Genre: Text
Date Issued: 2016-02-08
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Identifier: FSU_libsubv1_wos_000373056300060 (IID), 10.1063/1.4941993 (DOI)
Publication Note: The publisher’s version of record is available at http://www.dx.doi.org/10.1063/1.4941993
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000373056300060
Host Institution: FSU
Is Part Of: Applied Physics Letters.
0003-6951
Issue: iss. 6, vol. 108

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Wang, J., Rhodes, D., Feng, S., Nguyen, M. A. T., Watanabe, K., Taniguchi, T., … Zhu, J. (2016). Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime. Applied Physics Letters. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000373056300060