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Fractional Quantum Hall States in a Ge Quantum Well

Title: Fractional Quantum Hall States in a Ge Quantum Well.
Name(s): Mironov, O. A., author
d'Ambrumenil, N., author
Dobbie, A., author
Leadley, D. R., author
Suslov, A. V., author
Green, E., author
Type of Resource: text
Genre: Text
Date Issued: 2016-04-27
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
Identifier: FSU_libsubv1_wos_000374964400011 (IID), 10.1103/PhysRevLett.116.176802 (DOI)
Keywords: density, electron, magnetic-field
Publication Note: The publisher’s version of record is available at
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Host Institution: FSU
Is Part Of: Physical Review Letters.
Issue: iss. 17, vol. 116

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Mironov, O. A., D'Ambrumenil, N., Dobbie, A., Leadley, D. R., Suslov, A. V., & Green, E. (2016). Fractional Quantum Hall States in a Ge Quantum Well. Physical Review Letters. Retrieved from