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Interlayer electronic transport in CaMnBi2 antiferromagnet

Title: Interlayer Electronic Transport In Camnbi2 Antiferromagnet.
Name(s): Wang, Aifeng, author
Graf, D., author
Wu, Lijun, author
Wang, Kefeng, author
Bozin, E., author
Zhu, Yimei, author
Petrovic, C., author
Type of Resource: text
Genre: Text
Date Issued: 2016-09-12
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: We report interlayer electronic transport in CaMnBi2 single crystals. Quantum oscillations and angular magnetoresistance suggest coherent electronic conduction and valley polarized conduction of Dirac states. The small cyclotron mass, high mobility of carriers, and nontrivial Berry's phase are consistent with the presence of Dirac fermions on the side wall of the warped cylindrical Fermi surface. Similarly to SrMnBi2, which features an anisotropic Dirac cone, our results suggest that magnetic-field-induced changes in interlayer conduction are also present in layered bismuth-based materials with a zero-energy line in momentum space created by the staggered alkaline earth atoms.
Identifier: FSU_libsubv1_wos_000383145300004 (IID), 10.1103/PhysRevB.94.125118 (DOI)
Keywords: angle, anisotropy, bismuth, graphene, Magnetoresistance
Publication Note: The publisher’s version of record is available at
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Owner Institution: FSU
Is Part Of: Physical Review B.
Issue: iss. 12, vol. 94

Choose the citation style.
Wang, A., Graf, D., Wu, L., Wang, K., Bozin, E., Zhu, Y., & Petrovic, C. (2016). Interlayer Electronic Transport In Camnbi2 Antiferromagnet. Physical Review B. Retrieved from