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Electrical transport properties of single-crystal CaB6, SrB6, and BaB6

Title: Electrical Transport Properties Of Single-crystal Cab6, Srb6, And Bab6.
Name(s): Stankiewicz, Jolanta, author
Rosa, Priscila F. S., author
Schlottmann, Pedro, author
Fisk, Zachary, author
Type of Resource: text
Genre: Text
Date Issued: 2016-09-22
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: The electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals are measured as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, although fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explain the field and temperature dependences.
Identifier: FSU_libsubv1_wos_000383865700005 (IID), 10.1103/PhysRevB.94.125141 (DOI)
Keywords: divalent hexaborides, dx centers, electronic transport, ferromagnetism, heavily-doped semiconductors, high-pressure, low-temperature, magnetic-properties, Magnetoresistance, Scattering
Publication Note: The publisher’s version of record is available at
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Host Institution: FSU
Is Part Of: Physical Review B.
Issue: iss. 12, vol. 94

Choose the citation style.
Stankiewicz, J., Rosa, P. F. S., Schlottmann, P., & Fisk, Z. (2016). Electrical Transport Properties Of Single-crystal Cab6, Srb6, And Bab6. Physical Review B. Retrieved from