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Analysis of Threshold Voltage Fluctuations Induced by Random Doping in Metal-Oxide-Semiconductor Field-Effect-Transistors

Title: Analysis of Threshold Voltage Fluctuations Induced by Random Doping in Metal-Oxide-Semiconductor Field-Effect-Transistors.
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Name(s): Zhou, Hui, author
Andrei, Petru, professor directing thesis
Zheng, Jim P., committee member
Li, Hui, committee member
Department of Electrical and Computer Engineering, degree granting department
Florida State University, degree granting institution
Type of Resource: text
Genre: Text
Issuance: monographic
Date Issued: 2014
Publisher: Florida State University
Florida State University
Place of Publication: Tallahassee, Florida
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: The stochastic nature of ion implantation and diffusion processes induces variations of random doping concentration, which result in the fluctuations of the intrinsic parameters of semiconductor devices. The fluctuations of intrinsic parameters become especially significant when the devices are scaled down, particularly when the spatial scale of random dopants variations becomes comparable with the geometric dimensions of device. In the thesis, the fluctuation of threshold voltage induced by random doping in metal-oxide-semiconductor field-effect-transistors (MOSFETs) is analyzed by using a simple technique based on the solution of the two- dimension and three-dimension nonlinear Poisson equation. The two-dimension nonlinear Poisson equation is solved by solving the Jacobian matrix using Newton iteration technique. The three-dimension nonlinear Poisson equation is solved by a more efficient iterative method. This iterative method converges for any initial guess and can be implemented on computers with small memories. Both methods are both implemented in the C++ programming language. Sample simulation results are obtained and compared with the analytical results.
Identifier: FSU_migr_etd-8924 (IID)
Submitted Note: A Thesis submitted to the Department of Electrical and Computer Engineering in partial fulfillment of the requirements for the degree of Master of Science.
Degree Awarded: Spring Semester, 2014.
Date of Defense: April 21, 2014.
Bibliography Note: Includes bibliographical references.
Advisory Committee: Petru Andrei, Professor Directing Thesis; Jim P. Zheng, Committee Member; Hui Li, Committee Member.
Subject(s): Electrical engineering
Computer engineering
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_migr_etd-8924
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Host Institution: FSU

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Zhou, H. (2014). Analysis of Threshold Voltage Fluctuations Induced by Random Doping in Metal-Oxide-Semiconductor Field-Effect-Transistors. Retrieved from http://purl.flvc.org/fsu/fd/FSU_migr_etd-8924