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Gallium Arsenide Mesfet Small-Signal Modeling Using Backpropagation & RBF Neural Networks

Title: Gallium Arsenide Mesfet Small-Signal Modeling Using Backpropagation & RBF Neural Networks.
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Name(s): Langoni, Diego, author
Weatherspoon, Mark H., professor directing thesis
Meyer-Bäse, Anke, committee member
Department of Electrical and Computer Engineering, degree granting department
Florida State University, degree granting institution
Type of Resource: text
Genre: Text
Issuance: monographic
Date Issued: 2005
Publisher: Florida State University
Place of Publication: Tallahassee, Florida
Physical Form: computer
online resource
Extent: 1 online resource
Language(s): English
Abstract/Description: The small-signal intrinsic ECPs (equivalent circuit parameters) of a 4x50 µm gate width, 0.25 µm gate length GaAs (gallium arsenide) MESFET (metal semiconductor field-effect transistor) were modeled versus bias (voltage and current) and temperature using backpropagation and RBF (radial basis function) ANNs (artificial neural networks). The resulting ANNs consisted of 3-input, 8-output models of the MESFET ECPs and were compared to each other in terms of memory usage, convergence speed, and accuracy. Also, each network's performance was evaluated under "normal" training conditions (75% training data with a uniform distribution) and "stressed" training conditions (50% and 25% training data with a uniform distribution, 75%, 50%, and 25% training data with a skewed distribution). The results showed that for the RBF network, much better overall convergence speed as well as better accuracy under both "normal" and "moderately stressed" training conditions were obtained. However, the backpropagation network yielded better accuracy for the "extremely stressed" training conditions and better overall memory usage.
Identifier: FSU_migr_etd-3286 (IID)
Submitted Note: A Thesis submitted to the Electrical and Computer Engineering Department in partial fulfillment of the requirements for the degree of Master of Science.
Degree Awarded: Fall Semester, 2005.
Date of Defense: October 19, 2005.
Keywords: MESFET Modeling, RBF, Backpropagation, Artificial Neural Networks, Intrinsic Ecps
Bibliography Note: Includes bibliographical references.
Advisory Committee: Mark H. Weatherspoon, Professor Directing Thesis; Anke Meyer-Bäse, Committee Member.
Subject(s): Electrical engineering
Computer engineering
Persistent Link to This Record: http://purl.flvc.org/fsu/fd/FSU_migr_etd-3286
Owner Institution: FSU

Choose the citation style.
Langoni, D. (2005). Gallium Arsenide Mesfet Small-Signal Modeling Using Backpropagation & RBF Neural Networks. Retrieved from http://purl.flvc.org/fsu/fd/FSU_migr_etd-3286